产品中心
相对于硅基器件，具有易于使用（兼容Si MOSFET驱动）、可靠性高、性能参数领先等优点。
|
Part number |
Package | VDSS (V) |
RDS(on), typ(mΩ) |
Vth(V) |
IDS @25°C max |
IDS (pulse) 25°C max |
QOSS(nC) |
Qg (nC) |
Operating Temperature max | Product status | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|
| G2N70R240PB-H | PQFN8x8-2L | 700 | 240 | 3.6 | 7.4 | 30.0 | 21.0 | 15.6 | 150 | Mass Production | 下载 |
| G1N65R240PB-L | PQFN8x8-2L | 650 | 240 |
1.8 |
8.1 |
30.0 |
22.0 |
4.6 |
150 | Not Recommended | 更新中 |
| G1N65R240PB-N | PQFN8x8-2L | 650 | 240 | 4.0 | 8.1 | 30.0 | 21.0 | 8.1 | 150 | Not Recommended | 更新中 |
| G1N65R240PB | PQFN8x8-2L | 650 | 240 | 2.1 | 6.5 | 30.0 | 19.0 | 9.6 | 150 | Not Recommended | 更新中 |
| G3N70R240PB-H | PQFN8x8-2L | 700 | 240 | 3.6 | 7.4 | 30.0 | 18.0 | 15.0 | 150 | Mass Production | 下载 |
| G2N70R150PB-H | PQFN8x8-2L | 700 | 150 | 3.5 | 12.0 | 60.0 | 22.0 | TBD | 150 | Mass Production | 下载 |
| G1N65R150PB-H | PQFN8x8-2L | 650 | 150 | 3.5 | 13.5 | 60.0 | 33.0 | 15.6 | 150 | Not Recommended | 更新中 |
| G1N65R150PB-L | PQFN8x8-2L | 650 | 150 | 1.8 | 12.9 | 60.0 | 36.0 | 5.2 | 150 | Not Recommended | 更新中 |
| G1N65R150PB-N | PQFN8x8-2L | 650 | 150 | 4.0 | 13.0 | 60.0 | 34.0 | 8.0 | 150 | Not Recommended | 更新中 |
关注我们
联系我们
地址：广东省珠海市横琴粤澳深度合作区港澳智慧城T3栋1601单元
广东省深圳市南山区西丽街道曙光社区TCL国际E城G4栋B1001
上海市闵行区苏虹路333号上海虹桥万通中心1幢B栋512-3
Copyright © 2022.珠海镓未来科技有限公司 All rights reserved
